Selectable Nanopattern Arrays for Nanolithographic Imprint and Etch‐Mask Applications

Nanolithography: Selectable Nanopattern Arrays for Nanolithographic Imprint and Etch‐Mask Applications (Adv. Sci. 7/2015)

Thermal nanoimprint process for high-temperature fabrication of mesoscale epitaxial exchange-biased metallic wire arrays

A thermal nanoimprint process for the high-temperature (400 ◦C) fabrication of submicron, epitaxial, metallic wire arrays over areas > 1 × 1 cm2 is reported. Based on a method using an imprinted polymeric bilayer resist template that is transferred to a metallic (molybdenum) mask, this process is enabled by an appropriate undercut profile of the Mo mask. The undercut profile is obtained from a ...

VERY DEEP TRENCHES IN SILICON WAFER USING DRIE METHOD WITH ALUMINUM MASK

Abstract: In this paper, a DRIE process for fabricating MEMS silicon trenches with a depth of more than 250 m is described. The DRIE was produced in oxygen-added sulfur hexafluoride (SF6) plasma, with sample cooling to cryogenic temperature using a Plasmalab System 100 ICP 180 at different RF powers. A series of experiments were performed to determine the etch rate and selectivity of the some m...

One-Step Mask Etching Strategy Toward Ordered Ferroelectric Pb(Zr0.52Ti0.48)O3 Nanodot Arrays

In this report, ordered lead zirconate titanate Pb(Zr0.52Ti0.48)O3 (PZT) nanodot arrays were fabricated by an original one-step mask etching route. The one-step mask etching strategy is based on the patterned nanostructure of barrier layer (BL) at the bottom of anodic aluminum oxide (AAO), by a direct transfer of the nanopattern from BL to the pre-deposited PZT film, without introduction of any...

A direct-write, resistless hard mask for rapid nanoscale patterning of diamond

We introduce a simple, resist-free dry etch mask for producing patterns in diamond, both bulk and thin deposited films. Direct gallium ion beam exposure of the native diamond surface to doses as low as 10 cm forms a top surface hard mask resistant to both oxygen plasma chemical dry etching and, unexpectedly, argon plasma physical dry etching. Gallium implant hard masks of nominal 50 nm thicknes...